Light Source Diode laser with 405 nm or 375 nm Substrate Sizes Variable: 5 x 5 mm² to 9″ x 9″ | Customizable on request Substrate Thickness 0 to 12 mm Maximum Exposure Area 200 x 200 mm² Temperature controlled Flow Box Temperature stability ± 0.1°, ISO 4 environment Real-Time Autofocus Optical autofocus or air-gauge autofocus Autofocus Compensation Range 80 μm Standard or Advanced Grayscale Mode 128 / 256 gray levels respectively Vector Mode Enables the writing of stitching-free lines Overview Camera 8 x 10 mm² field of view facilitates alignment to marks and substrate navigation Backside Alignment (optional) Allows the alignment of exposures to structures on the backside of the substrate Advanced Options – Performance Upgrades High-Accuracy Coordinate System Includes golden plate calibration and climate monitoring: 2nd layer alignment down to 350 nm Professional Grayscale Mode 1024 gray levels, professional data conversion software Automatic Loading System Handling of masks up to 7" and wafers up to 8" with two carrier stations, pre-aligner and wafer scanner System Dimensions of Standard Version Width × depth × height 1300 mm × 1100 mm × 1950 mm (lithography unit only) Weight 1000 kg (lithography unit only) Installation requirements Electrical 230 VAC ± 5 %, 50/60 Hz, 16 A Compressed air 6 – 10 bar